Indium arsenide
Single crystal wafers
Melting point: | 943°C | Lattice constant: | 6.06 A° |
Absorption edge: | 3.7 µ | Energy gap: | 0.42 ev |
Density: | 5.66 g/cc | Dielectric constant: | 14.0 |
Refractive index: | 3.42 |
Dopant | Diameter mm | EPD cm-2 | Carrier concentration cm-3 | Mobility cm2/V.sec |
---|---|---|---|---|
Sn/N-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-18 | - |
S/N-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-18 | - |
Zn/P-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-19 | - |
Mn/P-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-19 | - |
Undoped/N-type | 25 - 50.8 | 5 x 103-4 | 1-3 x 1016-18 | 3-4 x 104 |
- Growth direction: (111) by LEC
- Orientations: (100), (111) ±0.5°
- Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
- Custom finish: epitaxy quality
- Flats: to SEMI-A or SEMI-B standards
- Thickness: >= 400 microns ± 20 microns
Polycrystalline indium arsenide also available.
Complete this form for a quotation on your chosen product or to receive further information or datasheet (if available).
Contact Electronics
Event
Natural Health Products NZ - Summit 2024
News
20 January 2020
New regional video for Azelis Asia Pacific
Insights
29 October 2019
Fecc interview with Anna Bertona
News